Transistor Physics [electronic resource] / by K. G. Nichols.
Erişim Adresi
ISBN
9789401099165
Dil Kodu
İngilizce
Yer Numarası
DK/11792
Yazar
Basım Bildirimi
1st ed. 1966.
Yayın Bilgisi
Dordrecht : Springer Netherlands : Imprint: Springer, 1966.
Fiziksel Niteleme
XII, 332 p. online resource.
Dizi
Modern Electrical Studies
İçindekiler Notu
1 Classical atomic, theory and interatomic binding -- 2 Quantum mechanics and band theory -- 3 Statistical mechanics -- 4 Semiconductors in thermodynamic equilibrium -- 5 Current flow in semiconductors -- 6 Semiconductors in non-equilibrium conditions -- 7 Current flow across semiconductor junctions -- 8 Minority carrier transistors -- 9 Space-charge-limited currents in semiconductors and insulators Majority carrier transistors -- Appendices -- II Common-emitter characteristics -- III The transistor as a charge controlled device. Circuit problems.
Özet, vb.
This book is intended as an introduction to the application of physical theory to the study of semiconductors and transistor devices. The book is based on lecture courses given by the authors to second and third year honours students in the Electronics Department of Southampton University, England. Some elementary knowledge of physics, circuit theory, and vector methods is assumed. The book deals almost exc1u sively with the theoretical aspects, but references are given to experi mental work. The first two chapters discuss c1assical atomic theory and quantum mechanical applications to electron energy levels in atoms, in particular the hydrogen atom, and in one-dimensional crystalline solids leading to the distinctions between metals, insulators, and semiconductors. Chapter 3 deals with statistical mechanics in some detail, so that the reader can appreciate the historical background leading to the Fermi Dirac statistics for electrons in metals and semiconductors, and in chapter 4 these statistics are applied to determine the current carrier density in various types of semiconductor. Equations for drift and diffusion currents are obtained in chapter 5, and the results applied to uiliform and graded impurity semiconductors in chapter 6. Current flow across p-n junctions is analysed in chapter 7, and the p-n-p transistor theory is developed in chapter 8. The discussion is limited to p-n-p transistors, but similar results apply for the n-p-n transistor.
Konu
Social sciences.
Humanities.
Humanities and Social Sciences.
Humanities.
Humanities and Social Sciences.
Kurum Adı
Eseri Alıntıla
Referansları kullanmadan önce gözden geçirmeniz ve varsa gerekli düzeltmeleri yapmanız önerilir.
Dijital Kaynak
MARC Görünümü
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245 10|aTransistor Physics|h[electronic resource] /|cby K. G. Nichols.
250 |a1st ed. 1966.
264 1|aDordrecht :|bSpringer Netherlands :|bImprint: Springer,|c1966.
300 |aXII, 332 p.|bonline resource.
336 |atext|btxt|2rdacontent
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490 1 |aModern Electrical Studies
505 0 |a1 Classical atomic, theory and interatomic binding -- 2 Quantum mechanics and band theory -- 3 Statistical mechanics -- 4 Semiconductors in thermodynamic equilibrium -- 5 Current flow in semiconductors -- 6 Semiconductors in non-equilibrium conditions -- 7 Current flow across semiconductor junctions -- 8 Minority carrier transistors -- 9 Space-charge-limited currents in semiconductors and insulators Majority carrier transistors -- Appendices -- II Common-emitter characteristics -- III The transistor as a charge controlled device. Circuit problems.
520 |aThis book is intended as an introduction to the application of physical theory to the study of semiconductors and transistor devices. The book is based on lecture courses given by the authors to second and third year honours students in the Electronics Department of Southampton University, England. Some elementary knowledge of physics, circuit theory, and vector methods is assumed. The book deals almost exc1u sively with the theoretical aspects, but references are given to experi mental work. The first two chapters discuss c1assical atomic theory and quantum mechanical applications to electron energy levels in atoms, in particular the hydrogen atom, and in one-dimensional crystalline solids leading to the distinctions between metals, insulators, and semiconductors. Chapter 3 deals with statistical mechanics in some detail, so that the reader can appreciate the historical background leading to the Fermi Dirac statistics for electrons in metals and semiconductors, and in chapter 4 these statistics are applied to determine the current carrier density in various types of semiconductor. Equations for drift and diffusion currents are obtained in chapter 5, and the results applied to uiliform and graded impurity semiconductors in chapter 6. Current flow across p-n junctions is analysed in chapter 7, and the p-n-p transistor theory is developed in chapter 8. The discussion is limited to p-n-p transistors, but similar results apply for the n-p-n transistor.
532 8 |aAccessibility summary: This PDF is not accessible. It is based on scanned pages and does not support features such as screen reader compatibility or described non-text content (images, graphs etc). However, it likely supports searchable and selectable text based on OCR (Optical Character Recognition). Users with accessibility needs may not be able to use this content effectively. Please contact us at accessibilitysupport@springernature.com if you require assistance or an alternative format.
532 8 |aInaccessible, or known limited accessibility
532 8 |aNo reading system accessibility options actively disabled
532 8 |aPublisher contact for further accessibility information: accessibilitysupport@springernature.com
650 0|aSocial sciences.
650 0|aHumanities.
650 14|aHumanities and Social Sciences.
710 2 |aSpringerLink (Online service)
773 0 |tSpringer Nature eBook
776 08|iPrinted edition:|z9780412210808
776 08|iPrinted edition:|z9789401099172
830 0|aModern Electrical Studies
856 40|uhttps://doi.org/10.1007/978-94-010-9916-5
912 |aZDB-2-SHU
912 |aZDB-2-SXH
912 |aZDB-2-BAE
950 |aHumanities, Social Sciences and Law (SpringerNature-11648)
950 |aHistory (R0) (SpringerNature-43722)
001 810516
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005 20260131015226
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008 130101s1966 ne | s |||| 0|eng d
020 |a9789401099165|9978-94-010-9916-5
024 7 |a10.1007/978-94-010-9916-5|2doi
041 |aeng
049 |aTürk Tarih Kurumu Kütüphanesi
050 4|aH1-99
050 4|aAZ19.2-999
072 7|aGT|2bicssc
072 7|aNON000000|2bisacsh
072 7|aGT|2thema
082 04|a300|223
082 04|a001.3|223
090 |aDK/11792
100 1 |aNichols, K. G.|eauthor.|4aut|4http://id.loc.gov/vocabulary/relators/aut
245 10|aTransistor Physics|h[electronic resource] /|cby K. G. Nichols.
250 |a1st ed. 1966.
264 1|aDordrecht :|bSpringer Netherlands :|bImprint: Springer,|c1966.
300 |aXII, 332 p.|bonline resource.
336 |atext|btxt|2rdacontent
337 |acomputer|bc|2rdamedia
338 |aonline resource|bcr|2rdacarrier
347 |atext file|bPDF|2rda
490 1 |aModern Electrical Studies
505 0 |a1 Classical atomic, theory and interatomic binding -- 2 Quantum mechanics and band theory -- 3 Statistical mechanics -- 4 Semiconductors in thermodynamic equilibrium -- 5 Current flow in semiconductors -- 6 Semiconductors in non-equilibrium conditions -- 7 Current flow across semiconductor junctions -- 8 Minority carrier transistors -- 9 Space-charge-limited currents in semiconductors and insulators Majority carrier transistors -- Appendices -- II Common-emitter characteristics -- III The transistor as a charge controlled device. Circuit problems.
520 |aThis book is intended as an introduction to the application of physical theory to the study of semiconductors and transistor devices. The book is based on lecture courses given by the authors to second and third year honours students in the Electronics Department of Southampton University, England. Some elementary knowledge of physics, circuit theory, and vector methods is assumed. The book deals almost exc1u sively with the theoretical aspects, but references are given to experi mental work. The first two chapters discuss c1assical atomic theory and quantum mechanical applications to electron energy levels in atoms, in particular the hydrogen atom, and in one-dimensional crystalline solids leading to the distinctions between metals, insulators, and semiconductors. Chapter 3 deals with statistical mechanics in some detail, so that the reader can appreciate the historical background leading to the Fermi Dirac statistics for electrons in metals and semiconductors, and in chapter 4 these statistics are applied to determine the current carrier density in various types of semiconductor. Equations for drift and diffusion currents are obtained in chapter 5, and the results applied to uiliform and graded impurity semiconductors in chapter 6. Current flow across p-n junctions is analysed in chapter 7, and the p-n-p transistor theory is developed in chapter 8. The discussion is limited to p-n-p transistors, but similar results apply for the n-p-n transistor.
532 8 |aAccessibility summary: This PDF is not accessible. It is based on scanned pages and does not support features such as screen reader compatibility or described non-text content (images, graphs etc). However, it likely supports searchable and selectable text based on OCR (Optical Character Recognition). Users with accessibility needs may not be able to use this content effectively. Please contact us at accessibilitysupport@springernature.com if you require assistance or an alternative format.
532 8 |aInaccessible, or known limited accessibility
532 8 |aNo reading system accessibility options actively disabled
532 8 |aPublisher contact for further accessibility information: accessibilitysupport@springernature.com
650 0|aSocial sciences.
650 0|aHumanities.
650 14|aHumanities and Social Sciences.
710 2 |aSpringerLink (Online service)
773 0 |tSpringer Nature eBook
776 08|iPrinted edition:|z9780412210808
776 08|iPrinted edition:|z9789401099172
830 0|aModern Electrical Studies
856 40|uhttps://doi.org/10.1007/978-94-010-9916-5
912 |aZDB-2-SHU
912 |aZDB-2-SXH
912 |aZDB-2-BAE
950 |aHumanities, Social Sciences and Law (SpringerNature-11648)
950 |aHistory (R0) (SpringerNature-43722)
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